型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
---|---|---|---|---|---|---|---|---|
NCV317MABDTRKG | 稳压IC |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV6324CMTAATBG | 电源IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV5183DR2G | 电源IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV8402ASTT1G | 驱动IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV8664CST50T3G | ONSEMI/安森美 |
23+ |
18000 |
|||||
STM32H503RBT6 | ST/意法 |
23+ |
20000 |
|||||
STM32H523CEU6 | ST/意法 |
23+ |
1400 |
|||||
SQJ407EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
3000 |
||||
SQJ488EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
16200 |
||||
SQJ443EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
126900 |
||||
SQ2362ES-T1_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
126900 |
||||
SQM120P06-07L_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
50000 |
||||
SQJ486EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
20000 |
||||
SQM100P10-19L_GE3 | 功率三极管 |
VISHAY/威世 |
23+ |
20000 |
||||
SQ2318AES-T1_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
18900 |
||||
SQJA06EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
5400 |
||||
NCV662SQ50T1G | 稳压IC |
ONSEMI/安森美 |
23+ |
2600 |
||||
STM32F051K6U6 | 32位MCU |
ST/意法 |
23+ |
50000 |
||||
STM32F411CEU6 | 32位MCU |
ST/意法 |
23+ |
50000 |
||||
STM32F427ZIT6 | 32位MCU |
ST/意法 |
23+ |
20000 |
||||
STM32F100CBT6B | ST/意法 |
23+ |
20000 |
|||||
STM32F429VET6 | ST/意法 |
23+ |
20000 |
|||||
STM32F429ZIT6 | 单片机MCU |
ST/意法 |
23+ |
14900 |
||||
STM32F427VGT6 | 单片机MCU |
ST/意法 |
23+ |
14100 |
||||
STM32F429IIT6 | 单片机MCU |
ST/意法 |
23+ |
9400 |
||||
SIC832AED-T1-GE3 | VISHAY/威世 |
23+ |
18900 |
|||||
SIC623ACD-T1-GE3 | VISHAY/威世 |
23+ |
81000 |
|||||
SIC448ED-T1-GE3 | VISHAY/威世 |
23+ |
50000 |
|||||
BAR43SFILM | 肖特基二极管 |
ST/意法 |
23+ |
18900 |
||||
NCV97310MW33AR2G | 电源IC |
ONSEMI/安森美 |
23+ |
9000 |