型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
---|---|---|---|---|---|---|---|---|
STM32F303CBT6 | ST/意法 |
23+ |
20000 |
|||||
STM32F303VBT6 | 32位MCU |
ST/意法 |
23+ |
18500 |
||||
STM32F302RBT6 | 32位MCU |
ST/意法 |
23+ |
15600 |
||||
AR0135CS2M00SUEA0-DPBR | 视觉、图像传感器 |
ONSEMI/安森美 |
23+ |
20000 |
||||
AR0230CSSC00SUEA0-DRBR | 工控元件 |
ONSEMI/安森美 |
23+ |
8600 |
||||
SPC563M64L7COAR | 功率三极管 |
ST/意法 |
23+ |
7200 |
||||
AR0135CS2C00SUEA0-DPBR | 视觉、图像传感器 |
ONSEMI/安森美 |
23+ |
6800 |
||||
AR0141CS2M00SUEA0-DPBR | 视觉、图像传感器 |
ONSEMI/安森美 |
23+ |
4700 |
||||
AR0237SRSH12SHRA0-DR | ONSEMI/安森美 |
23+ |
2700 |
|||||
FFB20UP20STM | 整流二极管 |
ONSEMI/安森美 |
23+ |
50000 |
||||
FFSP1065A | ONSEMI/安森美 |
23+ |
7200 |
|||||
PCFFS10120AF | ONSEMI/安森美 |
23+ |
2300 |
|||||
NCV7356D1R2G | 接口IC |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV8405ASTT1G | 贴片三极管 |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV431BVDR2G | 电源IC |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV4274CDS50R4G | 工控元件 |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV317MABDTRKG | 稳压IC |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV6324CMTAATBG | 电源IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV5183DR2G | 电源IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV8402ASTT1G | 驱动IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV8664CST50T3G | ONSEMI/安森美 |
23+ |
18000 |
|||||
STM32H503RBT6 | ST/意法 |
23+ |
20000 |
|||||
STM32H523CEU6 | ST/意法 |
23+ |
1400 |
|||||
SQJ407EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
3000 |
||||
SQJ488EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
16200 |
||||
SQJ443EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
126900 |
||||
SQ2362ES-T1_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
126900 |
||||
SQM120P06-07L_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
50000 |
||||
SQJ486EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
20000 |
||||
SQM100P10-19L_GE3 | 功率三极管 |
VISHAY/威世 |
23+ |
20000 |