型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
---|---|---|---|---|---|---|---|---|
STM32H725IGT3 | ST/意法 |
23+ |
50000 |
|||||
STM32H750VBT6 | 32位MCU |
ST/意法 |
23+ |
50000 |
||||
STM32H563VIT6 | ST/意法 |
23+ |
50000 |
|||||
STM32H743AII6TR | ST/意法 |
23+ |
20000 |
|||||
STM32H523CCU6 | ST/意法 |
23+ |
20000 |
|||||
NCV7723DQBR2G | ONSEMI/安森美 |
23+ |
50000 |
|||||
NCV4266ST50T3G | 电源IC |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV2901DR2G | 运放IC |
ONSEMI/安森美 |
23+ |
50000 |
||||
NCV8664ST50T3G | 超小型管 |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV33172DR2G | 运放IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV7805ABD2TR4G | 电源IC |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV1413BDR2G | 达林顿管 |
ONSEMI/安森美 |
23+ |
20000 |
||||
NCV8705MTADJTCG | 工控元件 |
ONSEMI/安森美 |
23+ |
19000 |
||||
SQJ912DEP-T1_GE3 | VISHAY/威世 |
23+ |
10800 |
|||||
SQ4917EY-T1_GE3 | 功率二极管 |
VISHAY/威世 |
23+ |
29300 |
||||
SQ2337ES-T1_GE3 | 功率三极管 |
VISHAY/威世 |
23+ |
167400 |
||||
SQJA82EP-T1_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
200000 |
||||
SQD40P10-40L_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
50000 |
||||
FGH75T65SQDT-F155 | IGBT管 |
ONSEMI/安森美 |
23+ |
50000 |
||||
SQJ459EP-T1_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
50000 |
||||
SQ2348ES-T1_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
20000 |
||||
SQJ138EP-T1_GE3 | VISHAY/威世 |
23+ |
20000 |
|||||
SQ2315ES-T1_GE3 | MOS(场效应管) |
VISHAY/威世 |
23+ |
20000 |
||||
SQJA86EP-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
16200 |
||||
NCS214RSQT2G | ONSEMI/安森美 |
23+ |
18200 |
|||||
SQ2398ES-T1_GE3 | 其他被动元件 |
VISHAY/威世 |
23+ |
8100 |
||||
SQJ147ELP-T1_GE3 | VISHAY/威世 |
23+ |
8100 |
|||||
SQJ182EP-T1_GE3 | VISHAY/威世 |
23+ |
8100 |
|||||
FSQ0370RNA | 其他被动元件 |
ONSEMI/安森美 |
23+ |
5400 |
||||
SQ3418EV-T1_GE3 | 中高压MOS管 |
VISHAY/威世 |
23+ |
2700 |